ESD Design and Analysis by Drain Electrode-Embedded Horizontal Schottky Elements for HV nLDMOSs

نویسندگان

چکیده

Electrostatic discharge (ESD) events can severely damage miniature components. Therefore, ESD protection is critical in integrated circuits. In this study, drain-electrode-embedded horizontal Schottky diode contact modulation and length reduction were performed on a high-voltage 60-V n-channel laterally diffused metal-oxide–semiconductor transistor (nLDMOS) element. The effect of the on-voltage characteristics cascade diodes was investigated. By using transmission-line pulse tester, trigger voltage, holding secondary breakdown current (It2) nLDMOS element determined I–V characteristic. As N+ area gradually replaced by parasitic at drain electrode, an equivalent circuit series formed, which increased on-resistance. larger higher It2 value was. This characteristic considerably improve immunity components (highest improvement 104%). good strategy for improving reliability without increasing production steps fabrication cost.

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ژورنال

عنوان ژورنال: Electronics

سال: 2021

ISSN: ['2079-9292']

DOI: https://doi.org/10.3390/electronics10020178